Vishay Si1308EDL-T1-GE3 N-channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-323

Si1308EDL-T1-GE3 Vishay  N-channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-323
Si1308EDL-T1-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
1.4 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Minimum Gate Threshold Voltage:
0.6V
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Maximum Drain Source Resistance:
185 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 1.5 A 30 V 3-Pin SOT-323 manufactured by Vishay. The manufacturer part number is Si1308EDL-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 1.4 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 400 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. Whereas its minimum gate threshold voltage includes 0.6v. The package is a sort of sot-323. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 185 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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Si1308EDL, N-Channel 30V (Drain-Source) MOSFET Data Sheet(Technical Reference)

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