Vishay SI1317DL-T1-GE3 P-channel MOSFET, 1.1 A, 20 V, 3-Pin SOT-323

SI1317DL-T1-GE3 Vishay  P-channel MOSFET, 1.1 A, 20 V, 3-Pin SOT-323
SI1317DL-T1-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
4.3 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Minimum Gate Threshold Voltage:
0.45V
Package Type:
SOT-323 (SC-70)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-50 °C
Maximum Continuous Drain Current:
1.1 A
Transistor Material:
Si
Maximum Drain Source Resistance:
270 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 1.1 A 20 V 3-Pin SOT-323 manufactured by Vishay. The manufacturer part number is SI1317DL-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 4.3 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. Whereas its minimum gate threshold voltage includes 0.45v. The package is a sort of sot-323 (sc-70). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -50 °c. While 1.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 270 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Si1317DL, P-Channel 20V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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