Vishay SI7456DDP-T1-GE3 N-channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK SO
Product Information
Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
19.6 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
35.7 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.12mm
Width:
5.26mm
Length:
6.25mm
Minimum Gate Threshold Voltage:
1.5V
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
28 A
Transistor Material:
Si
Maximum Drain Source Resistance:
31 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship SI7456DDP-T1-GE3 Internationally to many countries around the world.
This is N-channel MOSFET 28 A 100 V 8-Pin PowerPAK SO manufactured by Vishay. The manufacturer part number is SI7456DDP-T1-GE3. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 19.6 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 35.7 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.12mm. Furthermore, the product is 5.26mm wide. Its accurate length is 6.25mm. Whereas its minimum gate threshold voltage includes 1.5v. The package is a sort of powerpak so-8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 28 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 31 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
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