Vishay SI7501DN-T1-E3 Dual N/P-channel MOSFET Transistor, 5.4 A, 30 V, 8-Pin PowerPAK 1212

SI7501DN-T1-E3 Vishay  Dual N/P-channel MOSFET Transistor, 5.4 A, 30 V, 8-Pin PowerPAK 1212
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
12.5 nC @ 10 V, 9 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-25 V, -20 V, +20 V, +25 V
Height:
1.04mm
Width:
3.05mm
Length:
3.05mm
Maximum Drain Source Resistance:
35 mΩ, 51 mΩ
Package Type:
PowerPAK 1212
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5.4 A
Minimum Gate Threshold Voltage:
1V
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
RoHs Compliant
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This is Dual N/P-channel MOSFET Transistor 5.4 A 30 V 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SI7501DN-T1-E3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 12.5 nc @ 10 v, 9 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.6 w maximum power dissipation. It features a maximum gate source voltage of -25 v, -20 v, +20 v, +25 v. In addition, the height is 1.04mm. Furthermore, the product is 3.05mm wide. Its accurate length is 3.05mm. It provides up to 35 mω, 51 mω maximum drain source resistance. The package is a sort of powerpak 1212. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 5.4 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.

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Si7501DN Complementary 30-V (D-S) MOSFET Data Sheet(Technical Reference)

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