Category:
Power MOSFET
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
SMD-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
66 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1800 pF@ 25 V
Pin Count:
3
Typical Turn-Off Delay Time:
44 ns
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
125 W
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Drain Source Resistance:
270 mΩ
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
