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Vishay SIZ702DT-T1-GE3 Dual N-channel MOSFET, 13.8 A, 14 A, 30 V, 6-Pin PowerPAIR

Vishay

Product Information

Category:
Power MOSFET
Dimensions:
6.08 x 3.81 x 0.75mm
Maximum Continuous Drain Current:
13.8 A, 14 A
Transistor Material:
Si
Width:
3.81mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Package Type:
PowerPAIR
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
790 pF @ 15 V
Length:
6.08mm
Pin Count:
6
Typical Turn-Off Delay Time:
30 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
27 W, 30 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
14.5 mΩ
RoHs Compliant
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This is Dual N-channel MOSFET 13.8 A 14 A 30 V 6-Pin PowerPAIR manufactured by Vishay. The manufacturer part number is SIZ702DT-T1-GE3. It is of power mosfet category . The given dimensions of the product include 6.08 x 3.81 x 0.75mm. While 13.8 a, 14 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.81mm wide. The product offers series transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of powerpair. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 790 pf @ 15 v . Its accurate length is 6.08mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 30 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 27 w, 30 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.75mm. In addition, it has a typical 25 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 14.5 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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SiZ702DT, N-Channel 30V (D-S) MOSFETs(Technical Reference)

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FAQs

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You can order Vishay brand products with SIZ702DT-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SIZ702DT-T1-GE3 Dual N-channel MOSFET, 13.8 A, 14 A, 30 V, 6-Pin PowerPAIR. You can also check on our website or by contacting our customer support team for further order details on Vishay SIZ702DT-T1-GE3 Dual N-channel MOSFET, 13.8 A, 14 A, 30 V, 6-Pin PowerPAIR.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13883923 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13883923.
Yes. We ship SIZ702DT-T1-GE3 Internationally to many countries around the world.