Maximum Continuous Drain Current:
29 A
Transistor Material:
Si
Width:
4.69mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
34 nC @ 10 V
3D Model:
https://www.traceparts.com/els/rs-components/en/api/viewer/3d?SupplierID=RS_COMPONENTS&PartNumber=81438&DisplayLogo=False
Channel Type:
N
Length:
10.54mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
68 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
8.77mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
40 mΩ
