Category:
Power MOSFET
Dimensions:
10.66 x 4.82 x 16.51mm
Maximum Continuous Drain Current:
175 A
Transistor Material:
Si
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
4.7 mΩ
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
150 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5110 pF@ 25 V
Length:
10.66mm
Pin Count:
3
Typical Turn-Off Delay Time:
68 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
330 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
