Infineon IRF4104SPBF N-channel MOSFET Transistor, 120 A, 40 V HEXFET, 3-Pin D2PAK

IRF4104SPBF Infineon  N-channel MOSFET Transistor, 120 A, 40 V HEXFET, 3-Pin D2PAK
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
68 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
140 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
4.83mm
Width:
9.65mm
Length:
10.67mm
Maximum Drain Source Resistance:
6 mΩ
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
120 A
Minimum Gate Threshold Voltage:
2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
RoHs Compliant
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This is N-channel MOSFET Transistor 120 A 40 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF4104SPBF. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 68 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 140 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 4.83mm. Furthermore, the product is 9.65mm wide. Its accurate length is 10.67mm. It provides up to 6 mω maximum drain source resistance. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 120 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins.

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IRF4104SPbF AUTOMOTIVE MOSFET Data Sheet(Technical Reference)

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