Dimensions:
4.9 x 5.9 x 0.95mm
Maximum Continuous Drain Current:
39 A
Transistor Material:
Si
Width:
5.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
3V
Package Type:
HSO8-F4-B
Number of Elements per Chip:
1
Maximum Operating Temperature:
+85 °C
Typical Gate Charge @ Vgs:
9.2 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1200 pF@ 10 V
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
39 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
19 W
Series:
SK
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-40 °C
Maximum Drain Source Resistance:
6.7 mΩ
