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This is Diodes Inc Dual N-channel MOSFET 9.3 A 20 V 7-Pin U-DFN2030 manufactured by DiodesZetex. The manufacturer part number is DMN2014LHAB-7. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 16 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.7 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1.1v of maximum gate threshold voltage. In addition, the height is 0.6mm. Furthermore, the product is 2.05mm wide. Its accurate length is 3.05mm. It provides up to 28 mω maximum drain source resistance. The package is a sort of u-dfn2030. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 9.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
For more information please check the datasheets.
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