Diodes Inc DMN26D0UDJ-7 Dual N-channel MOSFET, 240 mA, 20 V, 6-Pin SOT-963

DMN26D0UDJ-7 Diodes Inc  Dual N-channel MOSFET, 240 mA, 20 V, 6-Pin SOT-963
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.05V
Height:
0.45mm
Width:
0.85mm
Length:
1.05mm
Maximum Drain Source Resistance:
10 Ω
Package Type:
SOT-963
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
240 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is Diodes Inc Dual N-channel MOSFET 240 mA 20 V 6-Pin SOT-963 manufactured by DiodesZetex. The manufacturer part number is DMN26D0UDJ-7. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 300 mw maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1.05v of maximum gate threshold voltage. In addition, the height is 0.45mm. Furthermore, the product is 0.85mm wide. Its accurate length is 1.05mm. It provides up to 10 ω maximum drain source resistance. The package is a sort of sot-963. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 240 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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