Vishay SQS462EN-T1_GE3 N-channel MOSFET, 8 A, 60 V SQ Rugged, 8-Pin PowerPAK 1212

SQS462EN-T1_GE3 Vishay  N-channel MOSFET, 8 A, 60 V SQ Rugged, 8-Pin PowerPAK 1212
Vishay

Product Information

Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
3.4mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
PowerPAK 1212-8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
8 nC @ 10 V
Channel Type:
N
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
33 W
Series:
SQ Rugged
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.12mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
135 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 8 A 60 V SQ Rugged 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SQS462EN-T1_GE3. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.4mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of powerpak 1212-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 8 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.4mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 33 w maximum power dissipation. The product sq rugged, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.12mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 135 mω maximum drain source resistance.

pdf icon
SQS462EN, Automotive N-Channel 60V (Drain-Source) 175degC MOSFET Data Sheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.

FAQs

Yes. You can also search SQS462EN-T1_GE3 on website for other similar products.
We accept all major payment methods for all products including ET13848658. Please check your shopping cart at the time of order.
You can order Vishay brand products with SQS462EN-T1_GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SQS462EN-T1_GE3 N-channel MOSFET, 8 A, 60 V SQ Rugged, 8-Pin PowerPAK 1212. You can also check on our website or by contacting our customer support team for further order details on Vishay SQS462EN-T1_GE3 N-channel MOSFET, 8 A, 60 V SQ Rugged, 8-Pin PowerPAK 1212.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13848658 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13848658.
Yes. We ship SQS462EN-T1_GE3 Internationally to many countries around the world.