Category:
Power MOSFET
Dimensions:
4.95 x 3.95 x 1.5mm
Maximum Continuous Drain Current:
6.9 A
Transistor Material:
Si
Width:
3.95mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.5V
Maximum Drain Source Resistance:
35 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18.6 nC @ 8 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1171 pF @ 10 V
Length:
4.95mm
Pin Count:
8
Typical Turn-Off Delay Time:
119.3 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1.5mm
Typical Turn-On Delay Time:
16.5 ns
Minimum Operating Temperature:
-55 °C
