Vishay SQD50N05-11L_GE3 N-channel MOSFET, 50 A, 50 V SQ Rugged, 3-Pin DPAK

SQD50N05-11L_GE3 Vishay  N-channel MOSFET, 50 A, 50 V SQ Rugged, 3-Pin DPAK
SQD50N05-11L_GE3
Vishay

Product Information

Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
6.22mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
50 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
34.6 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
75 W
Series:
SQ Rugged
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.38mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
24 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 50 A 50 V SQ Rugged 3-Pin DPAK manufactured by Vishay. The manufacturer part number is SQD50N05-11L_GE3. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 50 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 34.6 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 75 w maximum power dissipation. The product sq rugged, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.38mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 24 mω maximum drain source resistance.

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SQD50N05-11L, Automotive N-Channel 50V (Drain-Source) 175degC MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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