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This is N-channel MOSFET 21 A 25 V 8-Pin PowePAK 1212 manufactured by Vishay. The manufacturer part number is SIS430DN-T1-GE3. It has a maximum of 25 v drain source voltage. With a typical gate charge at Vgs includes 26.5 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 52 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.12mm. Furthermore, the product is 3.15mm wide. Its accurate length is 3.15mm. Whereas its minimum gate threshold voltage includes 1.2v. The package is a sort of powepak 1212. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 6.9 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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