Category:
Power MOSFET
Dimensions:
2.075 x 1.575 x 0.35mm
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Width:
1.575mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
16 V
Maximum Gate Threshold Voltage:
1V
Maximum Drain Source Resistance:
65 mΩ
Package Type:
DFN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
281.9 pF @ -10 V
Length:
2.08mm
Pin Count:
3
Typical Turn-Off Delay Time:
884.5 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
490 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.35mm
Typical Turn-On Delay Time:
79 ns
Minimum Operating Temperature:
-55 °C
