Category:
Power MOSFET
Dimensions:
1 x 1 x 0.268mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
MICRO FOOT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16 nC @ 8 V
Channel Type:
P
Typical Input Capacitance @ Vds:
610 pF @ -10 V
Length:
1mm
Pin Count:
4
Typical Turn-Off Delay Time:
35 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.268mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
205 mΩ
