Diodes Inc DMN2400UFB4-7 N-channel MOSFET, 750 mA, 20 V, 3-Pin X1-DFN1006

DMN2400UFB4-7 Diodes Inc  N-channel MOSFET, 750 mA, 20 V, 3-Pin X1-DFN1006
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
0.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
470 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
0.9V
Height:
0.35mm
Width:
0.675mm
Length:
1.08mm
Maximum Drain Source Resistance:
900 mΩ
Package Type:
X1-DFN1006
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
750 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 750 mA 20 V 3-Pin X1-DFN1006 manufactured by DiodesZetex. The manufacturer part number is DMN2400UFB4-7. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 0.5 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 470 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 0.9v of maximum gate threshold voltage. In addition, the height is 0.35mm. Furthermore, the product is 0.675mm wide. Its accurate length is 1.08mm. It provides up to 900 mω maximum drain source resistance. The package is a sort of x1-dfn1006. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 750 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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DMN2400UFB4, 20V N-Channel Enhancement Mode MOSFET(Technical Reference)

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