Microchip LND150N8-G N-channel MOSFET, 30 mA, 500 V Depletion, 4-Pin TO-243AA

LND150N8-G Microchip  N-channel MOSFET, 30 mA, 500 V Depletion, 4-Pin TO-243AA
Microchip

Product Information

Maximum Drain Source Voltage:
500 V
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.6mm
Width:
2.6mm
Length:
4.6mm
Maximum Drain Source Resistance:
1 kΩ
Package Type:
TO-243AA
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
30 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 30 mA 500 V Depletion 4-Pin TO-243AA manufactured by Microchip. The manufacturer part number is LND150N8-G. It has a maximum of 500 v drain source voltage. The product is available in surface mount configuration. The product carries depletion channel mode. Provides up to 1.6 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 1.6mm. Furthermore, the product is 2.6mm wide. Its accurate length is 4.6mm. It provides up to 1 kω maximum drain source resistance. The package is a sort of to-243aa. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 30 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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