Vishay SiHG32N50D-GE3 N-channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC

SiHG32N50D-GE3 Vishay  N-channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC
SiHG32N50D-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
500 V
Typical Gate Charge @ Vgs:
64 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
390 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.82mm
Width:
5.31mm
Length:
15.87mm
Minimum Gate Threshold Voltage:
3V
Package Type:
TO-247AC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Maximum Drain Source Resistance:
150 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 30 A 500 V 3-Pin TO-247AC manufactured by Vishay. The manufacturer part number is SiHG32N50D-GE3. It has a maximum of 500 v drain source voltage. With a typical gate charge at Vgs includes 64 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 390 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.82mm. Furthermore, the product is 5.31mm wide. Its accurate length is 15.87mm. Whereas its minimum gate threshold voltage includes 3v. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 150 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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SiHG32N50D, D Series Power MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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