Diodes Inc DMN4036LK3-13 N-channel MOSFET, 12.2 A, 40 V, 3-Pin DPAK

DMN4036LK3-13 Diodes Inc  N-channel MOSFET, 12.2 A, 40 V, 3-Pin DPAK
DMN4036LK3-13
DiodesZetex

Product Information

Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
9.2 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
8.49 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
2.39mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
61 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12.2 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 12.2 A 40 V 3-Pin DPAK manufactured by DiodesZetex. The manufacturer part number is DMN4036LK3-13. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 9.2 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 8.49 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 2.39mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 61 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 12.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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40V N-Channel Enhancement Mode Mosfet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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