Category:
Power MOSFET
Dimensions:
10.3 x 4.8 x 15.4mm
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
4.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-220FM
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
35 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1300 pF @ 25 V
Length:
10.3mm
Pin Count:
3
Typical Turn-Off Delay Time:
90 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
50 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.4mm
Typical Turn-On Delay Time:
30 ns
Maximum Drain Source Resistance:
420 mΩ
