Category:
Power MOSFET
Dimensions:
10.1 x 4.7 x 9.4mm
Maximum Continuous Drain Current:
16 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
260 mΩ
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
55 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1730 pF @ 25 V
Length:
10.1mm
Pin Count:
3
Typical Turn-Off Delay Time:
165 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
37.9 W
Series:
SuperFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.4mm
Typical Turn-On Delay Time:
42 ns
Minimum Operating Temperature:
-55 °C
