Category:
Power MOSFET
Dimensions:
5 x 4 x 1.55mm
Maximum Continuous Drain Current:
6.7 A, 7.4 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.7 nC @ 4.5 v, 7 nC @ 4.5 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
16 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.7 W, 3.1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.55mm
Typical Turn-On Delay Time:
9 ns, 10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
25 mΩ, 27 mΩ
