Category:
Power MOSFET
Maximum Continuous Drain Current:
12.5 A
Transistor Material:
Si
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
52 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2240 pF @ 15 V
Pin Count:
8
Typical Turn-Off Delay Time:
55 ns
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Drain Source Resistance:
9 mΩ
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
