Diodes Inc ZVNL120G N-channel MOSFET, 320 mA, 200 V, 3+Tab-Pin SOT-223

ZVNL120G Diodes Inc  N-channel MOSFET, 320 mA, 200 V, 3+Tab-Pin SOT-223
DiodesZetex

Product Information

Maximum Drain Source Voltage:
200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
1.5V
Height:
1.65mm
Width:
3.55mm
Length:
6.55mm
Maximum Drain Source Resistance:
10 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
320 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 320 mA 200 V 3+Tab-Pin SOT-223 manufactured by DiodesZetex. The manufacturer part number is ZVNL120G. It has a maximum of 200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 1.65mm. Furthermore, the product is 3.55mm wide. Its accurate length is 6.55mm. It provides up to 10 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 320 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration.

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ZVNL120G, N-Channel Enhancement Mode Low Threshold Vertical DMOS FET in SOT-223(Technical Reference)

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