Vishay SI1050X-T1-GE3 N-channel MOSFET, 1.34 A, 8 V, 6-Pin SOT-523

SI1050X-T1-GE3 Vishay  N-channel MOSFET, 1.34 A, 8 V, 6-Pin SOT-523
Vishay

Product Information

Maximum Drain Source Voltage:
8 V
Typical Gate Charge @ Vgs:
7.7 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
236 mW
Maximum Gate Source Voltage:
-5 V, +5 V
Height:
0.6mm
Width:
1.2mm
Length:
1.7mm
Minimum Gate Threshold Voltage:
0.35V
Package Type:
SOT-523 (SC-89)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.34 A
Transistor Material:
Si
Maximum Drain Source Resistance:
120 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 1.34 A 8 V 6-Pin SOT-523 manufactured by Vishay. The manufacturer part number is SI1050X-T1-GE3. It has a maximum of 8 v drain source voltage. With a typical gate charge at Vgs includes 7.7 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 236 mw maximum power dissipation. It features a maximum gate source voltage of -5 v, +5 v. In addition, the height is 0.6mm. Furthermore, the product is 1.2mm wide. Its accurate length is 1.7mm. Whereas its minimum gate threshold voltage includes 0.35v. The package is a sort of sot-523 (sc-89). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.34 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 120 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.

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Si1050X, N-Channel 8V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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