Maximum Drain Source Voltage:
600 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
STB37N60
Channel Type:
N
Maximum Gate Threshold Voltage:
4.9V
Maximum Drain Source Resistance:
0.094 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
28 A
Transistor Material:
SiC
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
110mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs:
54 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STB37N60DM2AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5724373
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
210W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2400 pF @ 100 V
Qualification:
AEC-Q101
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
MDmesh™ DM2
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB37
ECCN:
EAR99
