Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
25 W
Series:
MDmesh M2
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
16.4mm
Width:
4.6mm
Length:
10.4mm
Maximum Drain Source Resistance:
320 mΩ
Package Type:
TO-220FP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Forward Diode Voltage:
1.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
320mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STF16N60M2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5455746
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
25W (Tc)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
700 pF @ 100 V
Mounting Type:
Through Hole
Series:
MDmesh™ M2
Supplier Device Package:
TO-220FP
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STF16
ECCN:
EAR99
This is manufactured by STMicroelectronics. The manufacturer part number is STF16N60M2. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 19 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 25 w maximum power dissipation. The product mdmesh m2, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 16.4mm. Furthermore, the product is 4.6mm wide. Its accurate length is 10.4mm. It provides up to 320 mω maximum drain source resistance. The package is a sort of to-220fp. It consists of 1 elements per chip. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.6v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 320mohm @ 6a, 10v. The maximum gate charge and given voltages include 19 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 25w (tc). It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 700 pf @ 100 v. The product mdmesh™ m2, is a highly preferred choice for users. to-220fp is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 12a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stf16, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.