ON Semiconductor BMS3003-1E

BMS3003-1E ON Semiconductor
BMS3003-1E
ON Semiconductor

Product Information

Base Part Number:
BMS30
Detailed Description:
P-Channel 60V 78A (Ta) 2W (Ta), 40W (Tc) Through Hole TO-220F-3SG
Input Capacitance (Ciss) (Max) @ Vds:
13200pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Through Hole
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 39A, 10V
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
285nC @ 10V
Supplier Device Package:
TO-220F-3SG
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
2W (Ta), 40W (Tc)
Current - Continuous Drain (Id) @ 25°C:
78A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is BMS3003-1E. Base Part Number: bms30. It features p-channel 60v 78a (ta) 2w (ta), 40w (tc) through hole to-220f-3sg. The product's input capacitance at maximum includes 13200pf @ 20v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product is available in through hole configuration. It has a maximum Rds On and voltage of 6.5mohm @ 39a, 10v. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 285nc @ 10v. to-220f-3sg is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 2w (ta), 40w (tc). The continuous current drain at 25°C is 78a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Mult Dev Assembly/Mold Chg 20/Mar/2019(PCN Assembly/Origin)
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BMS300 01/Sep/2020(PCN Obsolescence/ EOL)
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BMS3003(Datasheets)

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