Maximum Continuous Drain Current:
51 A
Transistor Material:
Si
Width:
5.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
190 nC @ 10 V
Channel Type:
N
Length:
15.75mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
350 W
Series:
FDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
20.15mm
Maximum Drain Source Resistance:
60 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
60mOhm @ 25.5A, 10V
edacadModel:
STW55NM60ND Models
Gate Charge (Qg) (Max) @ Vgs:
190 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1880226
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
350W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5800 pF @ 50 V
Mounting Type:
Through Hole
Series:
FDmesh™ II
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
51A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW55N
ECCN:
EAR99
