Maximum Continuous Drain Current:
63 A
Transistor Material:
Si
Width:
15.75mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
2
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Length:
10.28mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
107 W
Series:
NTP5864N
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.82mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
0.0124 Ω
Base Part Number:
NTP586
Detailed Description:
N-Channel 60V 63A (Tc) 107W (Tc) Through Hole TO-220
Input Capacitance (Ciss) (Max) @ Vds:
1680pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
31nC @ 10V
Rds On (Max) @ Id, Vgs:
12.4mOhm @ 20A, 10V
Supplier Device Package:
TO-220
Packaging:
Tube
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
107W (Tc)
Current - Continuous Drain (Id) @ 25°C:
63A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
