STMicroelectronics STF34NM60N
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
84 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Series:
MDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Maximum Gate Threshold Voltage:
4V
Height:
16.4mm
Width:
4.6mm
Length:
10.4mm
Maximum Drain Source Resistance:
105 mΩ
Package Type:
TO-220FP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
29 A
Minimum Gate Threshold Voltage:
2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
105mOhm @ 14.5A, 10V
edacadModel:
STF34NM60N Models
Gate Charge (Qg) (Max) @ Vgs:
84 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2529295
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2722 pF @ 100 V
Mounting Type:
Through Hole
Series:
MDmesh™ II
Supplier Device Package:
TO-220FP
Current - Continuous Drain (Id) @ 25°C:
31.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STF34N
ECCN:
EAR99
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Yes. We ship STF34NM60N Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STF34NM60N. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 84 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 40 w maximum power dissipation. The product mdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 16.4mm. Furthermore, the product is 4.6mm wide. Its accurate length is 10.4mm. It provides up to 105 mω maximum drain source resistance. The package is a sort of to-220fp. It consists of 1 elements per chip. While 29 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 105mohm @ 14.5a, 10v. The maximum gate charge and given voltages include 84 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 40w (tc). The product's input capacitance at maximum includes 2722 pf @ 100 v. The product mdmesh™ ii, is a highly preferred choice for users. to-220fp is the supplier device package value. The continuous current drain at 25°C is 31.5a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stf34n, a base product number of the product. The product is designated with the ear99 code number.
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