Maximum Drain Source Voltage:
1200 V
Typical Gate Charge @ Vgs:
105 nC @ 20 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
270 W
Maximum Gate Source Voltage:
-10 V, +25 V
Height:
20.15mm
Width:
5.15mm
Length:
15.75mm
Maximum Drain Source Resistance:
100 mΩ
Package Type:
HiP247
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
45 A
Transistor Material:
Si
Forward Diode Voltage:
3.5V
Channel Type:
N
Maximum Operating Temperature:
+200 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.6V @ 1mA (Typ)
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
SCT30N120 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
edacadModelUrl:
/en/models/5015655
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
270W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 400 V
standardLeadTime:
52 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
HiP247™
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT30
ECCN:
EAR99
