Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
25 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
±16 V
Height:
1.65mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
21 mΩ
Package Type:
SO-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
7.5 A
Minimum Gate Threshold Voltage:
1V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
19.5mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STS7NF60L Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/954082
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 25 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
STripFET™ II
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
7.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STS7NF60
ECCN:
EAR99
