Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Width:
25.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
ISOTOP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
307.5 nC @ 10 V
Channel Type:
N
Length:
38.2mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Screw Mount
Maximum Power Dissipation:
460 W
Series:
MDmesh, SuperMESH
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.1mm
Minimum Operating Temperature:
-65 °C
Maximum Drain Source Resistance:
130 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
ISOTOP
Rds On (Max) @ Id, Vgs:
130mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
430 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
460W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
11100 pF @ 25 V
standardLeadTime:
13 Weeks
Mounting Type:
Chassis Mount
Series:
PowerMESH™ II
Supplier Device Package:
ISOTOP®
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STE40
ECCN:
EAR99
