Maximum Continuous Drain Current:
272 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
118 nC @ 0 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
375 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
2.8 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs:
153 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD19536KTTT Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/5218158
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
2 (1 Year)
Power Dissipation (Max):
375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
12000 pF @ 50 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
TO-263 (DDPAK-3)
Current - Continuous Drain (Id) @ 25°C:
200A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19536
ECCN:
EAR99
