Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
7.6 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
-15 V, +15 V
Maximum Gate Threshold Voltage:
2V
Height:
1.65mm
Width:
3.7mm
Length:
6.7mm
Maximum Drain Source Resistance:
120 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261)
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
NVF3055
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 5V
Rds On (Max) @ Id, Vgs:
120mOhm @ 1.5A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
440pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
SOT-223 (TO-261)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Customer Reference:
Power Dissipation (Max):
1.3W (Ta)
Technology:
MOSFET (Metal Oxide)
