Typical Gate Charge @ Vgs:
19 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
65 W
Maximum Gate Threshold Voltage:
6.5V
Height:
15.75mm
Width:
4.6mm
Length:
10.4mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Minimum Gate Threshold Voltage:
4.5V
Forward Diode Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
15 A
Reverse Recovery Time (trr):
23.5 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2.75V @ 15V, 3A
Voltage - Collector Emitter Breakdown (Max):
600 V
Td (on/off) @ 25°C:
17ns/72ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-220-3
Gate Charge:
19 nC
title:
STGP8NC60KD
REACH Status:
REACH Unaffected
edacadModel:
STGP8NC60KD Models
Switching Energy:
55µJ (on), 85µJ (off)
edacadModelUrl:
/en/models/1852476
Test Condition:
390V, 3A, 10Ohm, 15V
Manufacturer:
STMicroelectronics
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
IGBT Type:
-
Current - Collector Pulsed (Icm):
30 A
Mounting Type:
Through Hole
Series:
PowerMESH™
Supplier Device Package:
TO-220
Packaging:
Tube
Power - Max:
65 W
Base Product Number:
STGP8
ECCN:
EAR99
