Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
25 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
94 W
Series:
STripFET F7
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Width:
6.35mm
Length:
5.4mm
Maximum Drain Source Resistance:
5.4 mΩ
Package Type:
PowerFLAT 5 x 6
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
175°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
5.4mOhm @ 10.5A, 10V
title:
STL90N6F7
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STL90N6F7 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5357116
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
4.8W (Ta), 94W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 25 V
Mounting Type:
Surface Mount
Series:
STripFET™ F7
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Supplier Device Package:
PowerFlat™ (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL90
ECCN:
EAR99
