Maximum Drain Source Voltage:
1500 V
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
140 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4V
Height:
4.8mm
Width:
15.6mm
Length:
39.9mm
Maximum Drain Source Resistance:
10.5 Ω
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NDTL03
Detailed Description:
N-Channel 1500V 2.5A (Ta) 2.5W (Ta), 140W (Tc) Through Hole TO-3P(L)
Input Capacitance (Ciss) (Max) @ Vds:
650pF @ 30V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Rds On (Max) @ Id, Vgs:
10.5Ohm @ 1.25A, 10V
Drain to Source Voltage (Vdss):
1500V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
34nC @ 10V
Supplier Device Package:
TO-3P(L)
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-3PL
Power Dissipation (Max):
2.5W (Ta), 140W (Tc)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
