ON Semiconductor NDTL03N150CG

NDTL03N150CG ON Semiconductor
NDTL03N150CG
ON Semiconductor

Product Information

Maximum Drain Source Voltage:
1500 V
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
140 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4V
Height:
4.8mm
Width:
15.6mm
Length:
39.9mm
Maximum Drain Source Resistance:
10.5 Ω
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NDTL03
Detailed Description:
N-Channel 1500V 2.5A (Ta) 2.5W (Ta), 140W (Tc) Through Hole TO-3P(L)
Input Capacitance (Ciss) (Max) @ Vds:
650pF @ 30V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Rds On (Max) @ Id, Vgs:
10.5Ohm @ 1.25A, 10V
Drain to Source Voltage (Vdss):
1500V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
34nC @ 10V
Supplier Device Package:
TO-3P(L)
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-3PL
Power Dissipation (Max):
2.5W (Ta), 140W (Tc)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NDTL03N150CG. It has a maximum of 1500 v drain source voltage. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 140 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 4.8mm. Furthermore, the product is 15.6mm wide. Its accurate length is 39.9mm. It provides up to 10.5 ω maximum drain source resistance. The package is a sort of to-3p. It consists of 1 elements per chip. While 2.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ndtl03. It features n-channel 1500v 2.5a (ta) 2.5w (ta), 140w (tc) through hole to-3p(l). The product's input capacitance at maximum includes 650pf @ 30v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It has a maximum Rds On and voltage of 10.5ohm @ 1.25a, 10v. The product has a 1500v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 34nc @ 10v. to-3p(l) is the supplier device package value. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-3pl. The product carries maximum power dissipation 2.5w (ta), 140w (tc). The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mold compound change 20/Aug/2020(PCN Assembly/Origin)
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NDTL03N150C(Datasheets)
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Mult Dev EOL 7/Apr/2021(PCN Obsolescence/ EOL)

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