Maximum Continuous Drain Current:
200 A
Transistor Material:
Si
Width:
10.4mm
Transistor Configuration:
Single
Priced to Clear:
Yes
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
H2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
141 nC @ 10 V
Channel Type:
N
Length:
8.9mm
Pin Count:
6 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
365 W
Series:
STripFET F7
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.8mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
1.1 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D2PAK (6 Leads + Tab)
Rds On (Max) @ Id, Vgs:
1.1mOhm @ 90A, 10V
title:
STH410N4F7-6AG
Vgs(th) (Max) @ Id:
4.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STH410N4F7-6AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5402887
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
365W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
11500 pF @ 25 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
STripFET™ F7
Gate Charge (Qg) (Max) @ Vgs:
141 nC @ 10 V
Supplier Device Package:
H2PAK-6
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
200A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STH410
ECCN:
EAR99
