Maximum Continuous Drain Current:
34 A
Transistor Material:
Si
Width:
21.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
56 nC @ 10 V
Channel Type:
N
Length:
16.24mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
540 W
Series:
HiperFET, X2-Class
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
100 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.5V @ 2.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
105mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
540W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3330 pF @ 25 V
standardLeadTime:
47 Weeks
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
TO-247 (IXTH)
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH34
ECCN:
EAR99
