Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
3.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2V
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
9.5 nC @ 10 V
Channel Type:
N
Length:
3.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
46 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
13.3 mΩ
Manufacturer Standard Lead Time:
48 Weeks
Detailed Description:
N-Channel 60V 13A (Ta), 50A (Tc) 3.1W (Ta), 46W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NTTFS5
Gate Charge (Qg) (Max) @ Vgs:
9.5nC @ 10V
Rds On (Max) @ Id, Vgs:
9.3mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
880pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 50A (Tc)
Customer Reference:
Power Dissipation (Max):
3.1W (Ta), 46W (Tc)
Technology:
MOSFET (Metal Oxide)
