Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.7 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.3V
Height:
0.8mm
Width:
3.15mm
Length:
3.15mm
Maximum Drain Source Resistance:
15 mΩ
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
37 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
19 Weeks
Detailed Description:
N-Channel 60V 11A (Ta), 37A (Tc) 2.7W (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NTTFS5
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 10V
Rds On (Max) @ Id, Vgs:
11.5mOhm @ 8.7A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1462pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 37A (Tc)
Customer Reference:
Power Dissipation (Max):
2.7W (Ta), 33W (Tc)
Technology:
MOSFET (Metal Oxide)