Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
1.58 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
1.1mm
Width:
1.5mm
Length:
2.9mm
Maximum Drain Source Resistance:
12.8 Ω
Package Type:
CP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
150 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
3LN01
Detailed Description:
N-Channel 30V 150mA (Ta) 250mW (Ta) Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
7pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
3.7Ohm @ 80mA, 4V
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
1.58nC @ 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
250mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
150mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
