Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
13 nC @ 5 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
70 W
Series:
STripFET
Maximum Gate Source Voltage:
-18 V, +18 V
Height:
9.15mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
40 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
40mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STP36NF06L Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/1039545
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±18V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
70W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
660 pF @ 25 V
standardLeadTime:
39 Weeks
Mounting Type:
Through Hole
Series:
STripFET™ II
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP36
ECCN:
EAR99
