Maximum Drain Source Voltage:
90 V
Typical Gate Charge @ Vgs:
32 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
83 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
25 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
41 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
9 Weeks
Rds On (Max) @ Id, Vgs:
20 mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
2900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
61nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
90V
Standard Package:
2,500
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
3.8W (Ta), 83W (Tc)
Current - Continuous Drain (Id) @ 25°C:
8.7A (Ta), 41A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
