Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
75 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
93.75 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.5V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
7.8 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
101 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Detailed Description:
N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
NTD5802
Gate Charge (Qg) (Max) @ Vgs:
100nC @ 10V
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5025pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
16.4A (Ta), 101A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 93.75W (Tc)
Technology:
MOSFET (Metal Oxide)
